| PART |
Description |
Maker |
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| STGW28IH125DF STGWT28IH125DF |
1250 V, 25 A IH series trench gate field-stop IGBT
|
ST Microelectronics
|
| STGW60H65DF |
60 A, 650 V field stop trench gate IGBT with very fast diode
|
ST Microelectronics
STMicroelectronics
|
| STGP15M65DF2 |
Trench gate field-stop IGBT M series, 650 V, 15 A low loss
|
STMicroelectronics
|
| STGW40M120DF3 |
Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
|
ST Microelectronics
|
| STGWT80V60F STGFW80V60F |
Low thermal resistance
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
|
STMicroelectronics
ST Microelectronics
|
| APTGT100DH60TG |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT200DH60G |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 290 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| FGH40T65SQD |
650 V, 40 A Field Stop Trench IGBT
|
ON Semiconductor
|
